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Kingston 99U5471-025.A00LF 4GB
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB

Kingston 99U5471-025.A00LF 4GB vs Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB

总分
star star star star star
Kingston 99U5471-025.A00LF 4GB

Kingston 99U5471-025.A00LF 4GB

总分
star star star star star
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB

差异 规格 评论

差异

Kingston 99U5471-025.A00LF 4GB 需要考虑的原因
Kingston 99U5471-025.A00LF 4GB
报告一个错误
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB 需要考虑的原因
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 26
    左右 -30% 更低的延时
  • 更快的读取速度，GB/s
    18.9 left arrow 12.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.6 left arrow 7.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Kingston 99U5471-025.A00LF 4GB
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 20
  • 读取速度，GB/s
    12.7 left arrow 18.9
  • 写入速度，GB/s
    7.9 left arrow 14.6
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 12 14 15
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2118 left arrow 3022

Kingston 99U5471-025.A00LF 4GB RAM的比较

Kingston 99U5458-005.A01LF 4GB
Kingston 99U5458-005.A00LF 4GB

Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB RAM的比较

SK Hynix HYMP31GF72CMP4D5Y5 8GB
SpecTek Incorporated PSD34G13332 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5471-025.A00LF 4GB
Kingston 99U5471-025.A00LF 4GB
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Samsung M471A4G43MB1-CTD 32GB
Samsung M471A4G43MB1-CTD 32GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Good Wealth Technology Ltd. KETECH 8GB
Good Wealth Technology Ltd. KETECH 8GB
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Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB
Chun Well Technology Holding Limited CL16-20-20 D4-3200
Corsair CMK64GX5M2B5200C40 32GB
Corsair CMK64GX5M2B5200C40 32GB
内存RAM
Samsung 16KTF1G64AZ-1G9P1 8GB
Samsung 16KTF1G64AZ-1G9P1 8GB
Kingston 9905702-082.A00G 8GB
Kingston 9905702-082.A00G 8GB
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AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
G Skill Intl F4-2400C16-8GIS 8GB
G Skill Intl F4-2400C16-8GIS 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Apacer Technology 78.CAGP7.4020B 8GB
Apacer Technology 78.CAGP7.4020B 8GB
内存RAM
Samsung M471A1G44AB0-CWE 8GB
Samsung M471A1G44AB0-CWE 8GB
Kingston 9965604-008.C00G 8GB
Kingston 9965604-008.C00G 8GB
内存RAM
Kingston 99U5428-063.A00LF 8GB
Kingston 99U5428-063.A00LF 8GB
Micron Technology 9905625-004.A03LF 8GB
Micron Technology 9905625-004.A03LF 8GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
G Skill Intl F4-3200C16-4GRKD 4GB
G Skill Intl F4-3200C16-4GRKD 4GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
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Crucial Technology CT4G4DFS8213.M8FB 4GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
G Skill Intl F4-3200C16-16GTZRX 16GB
G Skill Intl F4-3200C16-16GTZRX 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
内存RAM