Kingston 99U5474-038.A00LF 4GB vs SK Hynix GKE800SO102408-2400 8GB

总分

Kingston 99U5474-038.A00LF 4GB

Kingston 99U5474-038.A00LF 4GB

总分

SK Hynix GKE800SO102408-2400 8GB

SK Hynix GKE800SO102408-2400 8GB

差异规格评论

差异

Kingston 99U5474-038.A00LF 4GB

需要考虑的原因
Kingston 99U5474-038.A00LF 4GB

报告一个错误

SK Hynix GKE800SO102408-2400 8GB

需要考虑的原因
SK Hynix GKE800SO102408-2400 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 40

左右 -8% 更低的延时
更快的读取速度，GB/s

14 12.9

测试中的平均数值
更快的写入速度，GB/s

9.3 7.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston 99U5474-038.A00LF 4GB

SK Hynix GKE800SO102408-2400 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 37
读取速度，GB/s

12.9 14.0
写入速度，GB/s

7.5 9.3
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2078 2327

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT4G4DFS8213.C8FBD1 4GB

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Corsair CM4B8G2J2666A15D 8GB

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Samsung 1600 CL10 Series 8GB

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GIGA - BYTE Technology Co Ltd GP-ARS16G44 8GB

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Samsung M471B1G73QH0-YK0 8GB

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Samsung M471A1G43EB1-CPB 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Corsair CMD32GX4M4C3200C14M 8GB

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A-DATA Technology AM2L16BC4R1-B0CS 4GB

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Ramaxel Technology RMSA3320MJ78HAF-3200 8GB

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Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Apacer Technology 78.BAGN8.40C0B 4GB

Apacer Technology 78.BAGN8.40C0B 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

AMD R948G2806U2S 8GB

AMD R948G2806U2S 8GB