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Kingston ACR256X64D3S1333C9 2GB
Micron Technology 16JTF51264HZ-1G4M1 4GB

Kingston ACR256X64D3S1333C9 2GB vs Micron Technology 16JTF51264HZ-1G4M1 4GB

总分
star star star star star
Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分
star star star star star
Micron Technology 16JTF51264HZ-1G4M1 4GB

Micron Technology 16JTF51264HZ-1G4M1 4GB

差异 规格 评论

差异

Kingston ACR256X64D3S1333C9 2GB 需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 39
    左右 31% 更低的延时
  • 更快的读取速度，GB/s
    11.9 left arrow 11.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.5 left arrow 8.1
    测试中的平均数值
Micron Technology 16JTF51264HZ-1G4M1 4GB 需要考虑的原因
Micron Technology 16JTF51264HZ-1G4M1 4GB
报告一个错误

规格

完整的技术规格清单
Kingston ACR256X64D3S1333C9 2GB
Micron Technology 16JTF51264HZ-1G4M1 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    27 left arrow 39
  • 读取速度，GB/s
    11.9 left arrow 11.3
  • 写入速度，GB/s
    8.5 left arrow 8.1
  • 内存带宽，mbps
    10600 left arrow 10600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    1620 left arrow 1821

Kingston ACR256X64D3S1333C9 2GB RAM的比较

Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology CT16G48C40U5.M8A1 16GB

Micron Technology 16JTF51264HZ-1G4M1 4GB RAM的比较

Crucial Technology CT51264BC1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Micron Technology 16JTF51264HZ-1G4M1 4GB
Micron Technology 16JTF51264HZ-1G4M1 4GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N
内存RAM
Kingston 9905403-515.A00LF 8GB
Kingston 9905403-515.A00LF 8GB
Samsung M378A1K43CB2-CRC 8GB
Samsung M378A1K43CB2-CRC 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Corsair CMWX8GD3200C16W4 8GB
Corsair CMWX8GD3200C16W4 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT8G4SFD824A.M16FE1 8GB
Crucial Technology CT8G4SFD824A.M16FE1 8GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Team Group Inc. TEAMGROUP-UD4-3200 8GB
Team Group Inc. TEAMGROUP-UD4-3200 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMW64GX4M4A2666C16 16GB
Corsair CMW64GX4M4A2666C16 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BL32G36C16U4BL.M16FB 32GB
Crucial Technology BL32G36C16U4BL.M16FB 32GB
内存RAM
Samsung M323R2GA3BB0-CQKOD 16GB
Samsung M323R2GA3BB0-CQKOD 16GB
Corsair CMT32GX4M2E3200C16 16GB
Corsair CMT32GX4M2E3200C16 16GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Crucial Technology BL8G36C16U4WL.M8FE1 8GB
Crucial Technology BL8G36C16U4WL.M8FE1 8GB
内存RAM
Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
SK Hynix HMA851S6AFR6N-UH 4GB
SK Hynix HMA851S6AFR6N-UH 4GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Samsung M378A2K43CB1-CTD 16GB
Samsung M378A2K43CB1-CTD 16GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB
Micron Technology 18ADF2G72PZ-2G3B1 16GB
内存RAM
SK Hynix HMT351R7EFR8C-RD 4GB
SK Hynix HMT351R7EFR8C-RD 4GB
Corsair CMV16GX4M1L2400C16 16GB
Corsair CMV16GX4M1L2400C16 16GB
内存RAM