Micron Technology 16JTF51264HZ-1G4M1 4GB vs Crucial Technology CT51264BC1339.M16F 4GB

总分

Micron Technology 16JTF51264HZ-1G4M1 4GB

Micron Technology 16JTF51264HZ-1G4M1 4GB

总分

Crucial Technology CT51264BC1339.M16F 4GB

Crucial Technology CT51264BC1339.M16F 4GB

差异规格评论

差异

Micron Technology 16JTF51264HZ-1G4M1 4GB

需要考虑的原因
Micron Technology 16JTF51264HZ-1G4M1 4GB

报告一个错误

Crucial Technology CT51264BC1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BC1339.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 39

左右 -39% 更低的延时
更快的读取速度，GB/s

11.8 11.3

测试中的平均数值
更快的写入速度，GB/s

8.5 8.1

测试中的平均数值

规格

完整的技术规格清单

Micron Technology 16JTF51264HZ-1G4M1 4GB

Crucial Technology CT51264BC1339.M16F 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

39 28
读取速度，GB/s

11.3 11.8
写入速度，GB/s

8.1 8.5
内存带宽，mbps

10600 10600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

1821 1749

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1G70BH0-YK0 8GB

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Kingston ACR32D4S2S1ME-8 8GB

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Kingston KP4T2F-PSB 4GB

Corsair CMK16GX4M2D2400C14 8GB

Corsair CMK16GX4M2D2400C14 8GB

Kingston KF548C38-16 16GB

Kingston KF548C38-16 16GB

Kingston CBD24D4S7S8ME-8 8GB

Kingston CBD24D4S7S8ME-8 8GB

Samsung 1600 CL10 Series 8GB

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Golden Empire CL15-17-17 D4-2666 8GB

Golden Empire CL15-17-17 D4-2666 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Micron Technology 8ATF1G64HZ-2G3H1 8GB

Micron Technology 8ATF1G64HZ-2G3H1 8GB