Kingston ACR256X64D3S1333C9 2GB vs Samsung M471A1G43EB1-CRC 8GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Samsung M471A1G43EB1-CRC 8GB

Samsung M471A1G43EB1-CRC 8GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

Samsung M471A1G43EB1-CRC 8GB

需要考虑的原因
Samsung M471A1G43EB1-CRC 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 27

左右 -8% 更低的延时
更快的读取速度，GB/s

14.8 11.9

测试中的平均数值
更快的写入速度，GB/s

9.3 8.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Samsung M471A1G43EB1-CRC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 25
读取速度，GB/s

11.9 14.8
写入速度，GB/s

8.5 9.3
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1620 2340

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Crucial Technology BLT16G4D26BFT4.C16FD 16GB

Crucial Technology BLT16G4D26BFT4.C16FD 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB

Wilk Elektronik S.A. IRP4000D4V64L18S/8G 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Samsung M471A1G43EB1-CRC 8GB

Samsung M471A1G43EB1-CRC 8GB

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

Kingston 9905678-024.A00G 4GB

Kingston 9905678-024.A00G 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

A-DATA Technology AO1E34RCSV1-BD7S 16GB

A-DATA Technology AO1E34RCSV1-BD7S 16GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

SK Hynix HMA451S6AFR8N-TF 4GB

SK Hynix HMA451S6AFR8N-TF 4GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

INTENSO 5641152 4GB

INTENSO 5641152 4GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Kingston RB26D4U9D8MEH-16 16GB

Kingston RB26D4U9D8MEH-16 16GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F4-3000C15-4GRK 4GB

G Skill Intl F4-3000C15-4GRK 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Crucial Technology BLS16G4S26BFSD.16FBD 16GB

Crucial Technology BLS16G4S26BFSD.16FBD 16GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

G Skill Intl F4-2800C15-8GVRB 8GB

G Skill Intl F4-2800C15-8GVRB 8GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

G Skill Intl F4-3200C16-16GTRS 16GB

G Skill Intl F4-3200C16-16GTRS 16GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Patriot Memory (PDP Systems) PSD416G24002S 16GB

Patriot Memory (PDP Systems) PSD416G24002S 16GB