Kingston ACR256X64D3S1333C9 2GB vs Samsung M471A5143DB0-CPB 4GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Samsung M471A5143DB0-CPB 4GB

Samsung M471A5143DB0-CPB 4GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 39

左右 31% 更低的延时

Samsung M471A5143DB0-CPB 4GB

需要考虑的原因
Samsung M471A5143DB0-CPB 4GB

报告一个错误

更快的读取速度，GB/s

14.1 11.9

测试中的平均数值
更快的写入速度，GB/s

10.7 8.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Samsung M471A5143DB0-CPB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 39
读取速度，GB/s

11.9 14.1
写入速度，GB/s

8.5 10.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1620 2183

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston K6VDX7-HYD 8GB

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Samsung M393A1G40DB0-CPB 8GB

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Crucial Technology CT8G4DFD8213.C16FDD2 8GB

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AMD R5S38G1601U2S 8GB

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A-DATA Technology AM1P26KC8T1-BAAS 8GB

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Kingston 9905598-039.A00G 16GB

Kingston 99U5474-013.A00LF 2GB

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Good Wealth Technology Ltd. KETECH 8GB

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

A-DATA Technology AO1P32NC8W1-BDZS 8GB

A-DATA Technology AO1P32NC8W1-BDZS 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Kingston HP24D4U7S8MH-8 8GB

Kingston HP24D4U7S8MH-8 8GB

SK Hynix HMT42GR7AFR4C-RD 16GB

SK Hynix HMT42GR7AFR4C-RD 16GB

Kingston 9965596-019.B01G 4GB

Kingston 9965596-019.B01G 4GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

AMD R748G2133U2S 8GB

AMD R748G2133U2S 8GB