Kingston KHX2400C11D3/4GX 4GB vs Micron Technology 16A6A2G64HZ-2-2E1 16GB

总分

Kingston KHX2400C11D3/4GX 4GB

Kingston KHX2400C11D3/4GX 4GB

总分

Micron Technology 16A6A2G64HZ-2-2E1 16GB

Micron Technology 16A6A2G64HZ-2-2E1 16GB

差异规格评论

差异

Kingston KHX2400C11D3/4GX 4GB

需要考虑的原因
Kingston KHX2400C11D3/4GX 4GB

报告一个错误

更快的写入速度，GB/s

10.7 8.9

测试中的平均数值

Micron Technology 16A6A2G64HZ-2-2E1 16GB

需要考虑的原因
Micron Technology 16A6A2G64HZ-2-2E1 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 35

左右 -59% 更低的延时
更快的读取速度，GB/s

17 16.2

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston KHX2400C11D3/4GX 4GB

Micron Technology 16A6A2G64HZ-2-2E1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 22
读取速度，GB/s

16.2 17.0
写入速度，GB/s

10.7 8.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2726 2623

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Crucial Technology CT8G4DFS824A.C8FE 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

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Golden Empire CL16-16-16 D4-2400 8GB

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Crucial Technology CT16G4DFD8266.M16FH 16GB

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Wilk Elektronik S.A. GR2133D464L15/8G 8GB