Kingston KVR533D2N4 512MB vs Patriot Memory (PDP Systems) 3600 C17 Series 4GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

Patriot Memory (PDP Systems) 3600 C17 Series 4GB

Patriot Memory (PDP Systems) 3600 C17 Series 4GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

Patriot Memory (PDP Systems) 3600 C17 Series 4GB

需要考虑的原因
Patriot Memory (PDP Systems) 3600 C17 Series 4GB

报告一个错误

低于PassMark测试中的延时，ns

33 75

左右 -127% 更低的延时
更快的读取速度，GB/s

17.5 1

测试中的平均数值
更快的写入速度，GB/s

15.8 1,672.1

测试中的平均数值
更高的内存带宽，mbps

17000 4200

左右 4.05 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

Patriot Memory (PDP Systems) 3600 C17 Series 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 33
读取速度，GB/s

1,943.5 17.5
写入速度，GB/s

1,672.1 15.8
内存带宽，mbps

4200 17000

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

4-4-4-12 / 533 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

301 3482

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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G Skill Intl F5-6400J3239G16G 16GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Corsair CMK8GX4M1D2400C14 8GB

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Crucial Technology CT102464BA160B.M16 8GB

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G Skill Intl F4-2666C19-32GNT 32GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

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Crucial Technology BLS16G4D240FSB.16FAD 16GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Samsung V-GeN D4S8GL30A8TX5 8GB

Samsung V-GeN D4S8GL30A8TX5 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Micron Technology 72ASS8G72LZ-2G6D2 64GB

Micron Technology 72ASS8G72LZ-2G6D2 64GB

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G Skill Intl F3-1333C9-4GIS 4GB

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G Skill Intl F4-4000C18-32GVK 32GB

Elpida EBJ40UG8EFU0-GN-F 4GB

Elpida EBJ40UG8EFU0-GN-F 4GB

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G Skill Intl F4-3000C16-8GTRS 8GB