Kingston KVR800D2N6/2G 2GB vs Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

总分

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

总分

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

差异规格评论

差异

Kingston KVR800D2N6/2G 2GB

需要考虑的原因
Kingston KVR800D2N6/2G 2GB

报告一个错误

低于PassMark测试中的延时，ns

50 73

左右 32% 更低的延时
更快的读取速度，GB/s

5 15.1

测试中的平均数值

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

需要考虑的原因
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

报告一个错误

更快的写入速度，GB/s

7.9 1,905.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Kingston KVR800D2N6/2G 2GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

50 73
读取速度，GB/s

5,143.3 15.1
写入速度，GB/s

1,905.1 7.9
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

855 1724

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

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Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Samsung M393B1K70CH0-CH9 8GB

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G Skill Intl F3-2666C12-8GTXD 8GB

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G Skill Intl F4-3200C22-16GRS 16GB

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Kingston KHX2800C14D4/8GX 8GB

Corsair CMK16GX4M1A2666C16 16GB

Corsair CMK16GX4M1A2666C16 16GB