Lexar Co Limited LD4AU016G-H3200GST 16GB vs G Skill Intl F4-3000C14-8GVR 8GB

总分

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

总分

G Skill Intl F4-3000C14-8GVR 8GB

G Skill Intl F4-3000C14-8GVR 8GB

差异规格评论

差异

Lexar Co Limited LD4AU016G-H3200GST 16GB

需要考虑的原因
Lexar Co Limited LD4AU016G-H3200GST 16GB

报告一个错误

更高的内存带宽，mbps

25600 17000

左右 1.51% 更高的带宽

G Skill Intl F4-3000C14-8GVR 8GB

需要考虑的原因
G Skill Intl F4-3000C14-8GVR 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 33

左右 -65% 更低的延时
更快的读取速度，GB/s

18.2 17.8

测试中的平均数值
更快的写入速度，GB/s

14.0 12.5

测试中的平均数值

规格

完整的技术规格清单

Lexar Co Limited LD4AU016G-H3200GST 16GB

G Skill Intl F4-3000C14-8GVR 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 20
读取速度，GB/s

17.8 18.2
写入速度，GB/s

12.5 14.0
内存带宽，mbps

25600 17000

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3285 3359

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Ramaxel Technology RMT3020EC58E9F1333 4GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Corsair CMR16GX4M2Z2933C16 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

Corsair CMW32GX4M4D3600C18 8GB

Corsair CMW32GX4M4D3600C18 8GB