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Micron Technology 16JTF51264HZ-1G6M1 4GB
ASint Technology SLA302G08-GGNHC 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB vs ASint Technology SLA302G08-GGNHC 4GB

总分
star star star star star
Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

总分
star star star star star
ASint Technology SLA302G08-GGNHC 4GB

ASint Technology SLA302G08-GGNHC 4GB

差异 规格 评论

差异

Micron Technology 16JTF51264HZ-1G6M1 4GB 需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 38
    左右 26% 更低的延时
ASint Technology SLA302G08-GGNHC 4GB 需要考虑的原因
ASint Technology SLA302G08-GGNHC 4GB
报告一个错误
  • 更快的读取速度，GB/s
    14.8 left arrow 12.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.3 left arrow 9.0
    测试中的平均数值

规格

完整的技术规格清单
Micron Technology 16JTF51264HZ-1G6M1 4GB
ASint Technology SLA302G08-GGNHC 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    28 left arrow 38
  • 读取速度，GB/s
    12.9 left arrow 14.8
  • 写入速度，GB/s
    9.0 left arrow 9.3
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    2112 left arrow 2303

Micron Technology 16JTF51264HZ-1G6M1 4GB RAM的比较

SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5663-007.A00G 16GB

ASint Technology SLA302G08-GGNHC 4GB RAM的比较

G Skill Intl F3-2400C10-8GTX 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
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ASint Technology SLA302G08-GGNHC 4GB
ASint Technology SLA302G08-GGNHC 4GB
内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Samsung M391A1G43DB0-CPB 8GB
内存RAM