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Micron Technology 16JTF51264HZ-1G6M1 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
比较
Micron Technology 16JTF51264HZ-1G6M1 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
总分
Micron Technology 16JTF51264HZ-1G6M1 4GB
总分
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
差异
规格
评论
差异
需要考虑的原因
Micron Technology 16JTF51264HZ-1G6M1 4GB
报告一个错误
需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
报告一个错误
低于PassMark测试中的延时,ns
23
28
左右 -22% 更低的延时
更快的读取速度,GB/s
17.2
12.9
测试中的平均数值
更快的写入速度,GB/s
13.0
9.0
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Micron Technology 16JTF51264HZ-1G6M1 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
23
读取速度,GB/s
12.9
17.2
写入速度,GB/s
9.0
13.0
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2112
3004
Micron Technology 16JTF51264HZ-1G6M1 4GB RAM的比较
SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5663-007.A00G 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B2G70BH0-CK0 16GB
Avant Technology J642GU42J5213N4 16GB
Samsung M393B2G70BH0-CH9 16GB
Corsair CMD16GX4M2K4133C19 8GB
A-DATA Technology DQVE1908 512MB
Golden Empire CL16-16-16 D4-3000 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4000C16-16GTZR 16GB
Samsung M393B5170FH0-CK0 4GB
Apacer Technology 78.C1GQ5.C7C0B 8GB
Kingston ACR256X64D3S1333C9 2GB
Kingston 9905625-098.A00G 16GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT8GA64D88AX3S-HR 8GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-3200C16-16GRS 16GB
Protocol Engines Kingrock 800 2GB 2GB
Kingston HP24D4R7D4MAM-32 32GB
Samsung M393B2G70BH0-CK0 16GB
Apacer Technology 78.B1GM3.C7W0B 4GB
Samsung M393B1K70CH0-CH9 8GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2800C16-8GRR 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Kingmax Semiconductor GSLG42F-18---------- 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Corsair CM4X16GE2133C13K8 16GB
报告一个错误
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Bug description
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