Micron Technology 16KTF51264HZ-1G6M1 4GB vs Patriot Memory (PDP Systems) 3866 C18 Series 8GB

总分

Micron Technology 16KTF51264HZ-1G6M1 4GB

Micron Technology 16KTF51264HZ-1G6M1 4GB

总分

Patriot Memory (PDP Systems) 3866 C18 Series 8GB

Patriot Memory (PDP Systems) 3866 C18 Series 8GB

差异规格评论

差异

Micron Technology 16KTF51264HZ-1G6M1 4GB

需要考虑的原因
Micron Technology 16KTF51264HZ-1G6M1 4GB

报告一个错误

Patriot Memory (PDP Systems) 3866 C18 Series 8GB

需要考虑的原因
Patriot Memory (PDP Systems) 3866 C18 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 43

左右 -95% 更低的延时
更快的读取速度，GB/s

20.9 10.6

测试中的平均数值
更快的写入速度，GB/s

18.5 6.9

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Micron Technology 16KTF51264HZ-1G6M1 4GB

Patriot Memory (PDP Systems) 3866 C18 Series 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 22
读取速度，GB/s

10.6 20.9
写入速度，GB/s

6.9 18.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1647 4324

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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