Micron Technology 18HTF12872AY-800F1 1GB vs G Skill Intl F4-2400C17-4GIS 4GB

总分

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

总分

G Skill Intl F4-2400C17-4GIS 4GB

G Skill Intl F4-2400C17-4GIS 4GB

差异规格评论

差异

Micron Technology 18HTF12872AY-800F1 1GB

需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB

报告一个错误

更快的读取速度，GB/s

4 17.3

测试中的平均数值
更快的写入速度，GB/s

2,107.0 13.2

测试中的平均数值

G Skill Intl F4-2400C17-4GIS 4GB

需要考虑的原因
G Skill Intl F4-2400C17-4GIS 4GB

报告一个错误

低于PassMark测试中的延时，ns

22 58

左右 -164% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Micron Technology 18HTF12872AY-800F1 1GB

G Skill Intl F4-2400C17-4GIS 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 22
读取速度，GB/s

4,025.3 17.3
写入速度，GB/s

2,107.0 13.2
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 9 11 13 15 17
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

670 2648

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 99U5584-005.A00LF 4GB

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Apacer Technology GD2.111881.002 4GB

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Corsair CMD8GX3M2A2933C12 4GB

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Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

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Chun Well Technology Holding Limited ND4U1636181DRLDE 1

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Netac Technology Co Ltd EKBLACK4083016A 8GB

Netac Technology Co Ltd EKBLACK4083016A 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Kingston KHX2666C15/8G 8GB

Kingston KHX2666C15/8G 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Team Group Inc. DDR4 2800 8GB

Team Group Inc. DDR4 2800 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Good Wealth Technology Ltd. 8GB

Good Wealth Technology Ltd. 8GB