Micron Technology 18HTF12872AY-800F1 1GB vs Patriot Memory (PDP Systems) PSD44G240082 4GB

总分

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

总分

Patriot Memory (PDP Systems) PSD44G240082 4GB

Patriot Memory (PDP Systems) PSD44G240082 4GB

差异规格评论

差异

Micron Technology 18HTF12872AY-800F1 1GB

需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB

报告一个错误

更快的读取速度，GB/s

4 15.4

测试中的平均数值
更快的写入速度，GB/s

2,107.0 12.2

测试中的平均数值

Patriot Memory (PDP Systems) PSD44G240082 4GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD44G240082 4GB

报告一个错误

低于PassMark测试中的延时，ns

34 58

左右 -71% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Micron Technology 18HTF12872AY-800F1 1GB

Patriot Memory (PDP Systems) PSD44G240082 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 34
读取速度，GB/s

4,025.3 15.4
写入速度，GB/s

2,107.0 12.2
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

670 2583

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology AM2P24HC8T1-BBFS 8GB

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G Skill Intl F4-2933C14-16GTZRX 16GB

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Team Group Inc. TEAMGROUP-D4-3866 4GB

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G Skill Intl F3-2133C9-4GAB 4GB

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Kingston ACR24D4S7D8MB-16 16GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Mushkin 99[2/7/4]205F 8GB

Mushkin 99[2/7/4]205F 8GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Samsung M393A2G40DBD-CP1???? 16GB

Samsung M393A2G40DBD-CP1???? 16GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

A-DATA Technology DDR4 4133 8GB

A-DATA Technology DDR4 4133 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

SK Hynix HMA82GS6CJR8N-XN 16GB

SK Hynix HMA82GS6CJR8N-XN 16GB