Micron Technology 18HTF12872AY-800F1 1GB vs Samsung M393A2K40CB1-CRC 16GB

总分

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

总分

Samsung M393A2K40CB1-CRC 16GB

Samsung M393A2K40CB1-CRC 16GB

差异规格评论

差异

Micron Technology 18HTF12872AY-800F1 1GB

需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB

报告一个错误

更快的读取速度，GB/s

4 10.7

测试中的平均数值

Samsung M393A2K40CB1-CRC 16GB

需要考虑的原因
Samsung M393A2K40CB1-CRC 16GB

报告一个错误

低于PassMark测试中的延时，ns

45 58

左右 -29% 更低的延时
更快的写入速度，GB/s

6.5 2,107.0

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Micron Technology 18HTF12872AY-800F1 1GB

Samsung M393A2K40CB1-CRC 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 45
读取速度，GB/s

4,025.3 10.7
写入速度，GB/s

2,107.0 6.5
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

670 2142

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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AMD R5316G1609U2K 8GB

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G Skill Intl F4-3200C14-16GTZDCB 16GB

G Skill Intl F4-3200C14-16GTZDCB 16GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

Corsair CMD128GX4M8B2800C14 16GB

Corsair CMD128GX4M8B2800C14 16GB

Corsair CML16GX3M2A1600C10 8GB

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Patriot Memory (PDP Systems) 4400 C18 Series 8GB

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AMD R538G1601U2S-UO 8GB

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Corsair CM4B4G1J2400A14K 4GB