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Micron Technology 36ASF2G72PZ-2G1A2 16GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB vs Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

总分
star star star star star
Micron Technology 36ASF2G72PZ-2G1A2 16GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB

总分
star star star star star
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB

差异 规格 评论

差异

Micron Technology 36ASF2G72PZ-2G1A2 16GB 需要考虑的原因
Micron Technology 36ASF2G72PZ-2G1A2 16GB
报告一个错误
  • 更高的内存带宽，mbps
    17500 left arrow 17000
    左右 1.03% 更高的带宽
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB 需要考虑的原因
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
报告一个错误
  • 更快的读取速度，GB/s
    20.5 left arrow 10.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.1 left arrow 8.2
    测试中的平均数值

规格

完整的技术规格清单
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 52
  • 读取速度，GB/s
    10.2 left arrow 20.5
  • 写入速度，GB/s
    8.2 left arrow 10.1
  • 内存带宽，mbps
    17500 left arrow 17000
Other
  • 描述
    PC4-17500, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    no data left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2319 left arrow 2472

Micron Technology 36ASF2G72PZ-2G1A2 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Galaxy Microsystems Ltd. GOC2017-Fugger 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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