Micron Technology 36JSF2G72PZ-1G9N1 16GB vs Crucial Technology CT8G4DFS8266.C8FN 8GB

总分

Micron Technology 36JSF2G72PZ-1G9N1 16GB

Micron Technology 36JSF2G72PZ-1G9N1 16GB

总分

Crucial Technology CT8G4DFS8266.C8FN 8GB

Crucial Technology CT8G4DFS8266.C8FN 8GB

差异规格评论

差异

Micron Technology 36JSF2G72PZ-1G9N1 16GB

需要考虑的原因
Micron Technology 36JSF2G72PZ-1G9N1 16GB

报告一个错误

Crucial Technology CT8G4DFS8266.C8FN 8GB

需要考虑的原因
Crucial Technology CT8G4DFS8266.C8FN 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 40

左右 -21% 更低的延时
更快的读取速度，GB/s

16.4 9.6

测试中的平均数值
更快的写入速度，GB/s

11.3 8.0

测试中的平均数值
更高的内存带宽，mbps

21300 14200

左右 1.5 更高的带宽

规格

完整的技术规格清单

Micron Technology 36JSF2G72PZ-1G9N1 16GB

Crucial Technology CT8G4DFS8266.C8FN 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 33
读取速度，GB/s

9.6 16.4
写入速度，GB/s

8.0 11.3
内存带宽，mbps

14200 21300

Other

描述

PC3-14200, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

no data 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2137 2919

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A5244CB0-CWE 4GB

Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

SK Hynix HMT451S6DFR8A-PB 4GB

SK Hynix HMT451S6DFR8A-PB 4GB

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