Micron Technology 8ATF2G64HZ-3G2E2 16GB vs G Skill Intl F4-3200C16-16GRS 16GB

总分

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

总分

G Skill Intl F4-3200C16-16GRS 16GB

G Skill Intl F4-3200C16-16GRS 16GB

差异规格评论

差异

Micron Technology 8ATF2G64HZ-3G2E2 16GB

需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB

报告一个错误

更高的内存带宽，mbps

25600 19200

左右 1.33% 更高的带宽

G Skill Intl F4-3200C16-16GRS 16GB

需要考虑的原因
G Skill Intl F4-3200C16-16GRS 16GB

报告一个错误

低于PassMark测试中的延时，ns

19 51

左右 -168% 更低的延时
更快的读取速度，GB/s

20.9 15.6

测试中的平均数值
更快的写入速度，GB/s

15.8 11.8

测试中的平均数值

规格

完整的技术规格清单

Micron Technology 8ATF2G64HZ-3G2E2 16GB

G Skill Intl F4-3200C16-16GRS 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

51 19
读取速度，GB/s

15.6 20.9
写入速度，GB/s

11.8 15.8
内存带宽，mbps

25600 19200

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2687 3801

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KP4T2F-PSB 4GB

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Crucial Technology BLS8G4D30AESEK.M8FE1 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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Corsair CMK16GX4M2A2400C14 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Kingston XK2M26-MIE-NX 16GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB

Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

Crucial Technology CT16G4SFD8266.C16FN 16GB

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Mushkin 991586 2GB

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Apacer Technology 78.BAGM6.40C0B 4GB

Apacer Technology 78.BAGM6.40C0B 4GB