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Micron Technology 8ATF51264AZ-2G1B1 4GB
G Skill Intl F4-2400C15-16GTZR 16GB

Micron Technology 8ATF51264AZ-2G1B1 4GB vs G Skill Intl F4-2400C15-16GTZR 16GB

总分
star star star star star
Micron Technology 8ATF51264AZ-2G1B1 4GB

Micron Technology 8ATF51264AZ-2G1B1 4GB

总分
star star star star star
G Skill Intl F4-2400C15-16GTZR 16GB

G Skill Intl F4-2400C15-16GTZR 16GB

差异 规格 评论

差异

Micron Technology 8ATF51264AZ-2G1B1 4GB 需要考虑的原因
Micron Technology 8ATF51264AZ-2G1B1 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 31
    左右 6% 更低的延时
G Skill Intl F4-2400C15-16GTZR 16GB 需要考虑的原因
G Skill Intl F4-2400C15-16GTZR 16GB
报告一个错误
  • 更快的读取速度，GB/s
    17.1 left arrow 15.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.9 left arrow 11.8
    测试中的平均数值

规格

完整的技术规格清单
Micron Technology 8ATF51264AZ-2G1B1 4GB
G Skill Intl F4-2400C15-16GTZR 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    29 left arrow 31
  • 读取速度，GB/s
    15.8 left arrow 17.1
  • 写入速度，GB/s
    11.8 left arrow 13.9
  • 内存带宽，mbps
    17000 left arrow 17000
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2711 left arrow 3422

Micron Technology 8ATF51264AZ-2G1B1 4GB RAM的比较

Samsung M393B2G70BH0-CK0 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-2400C15-16GTZR 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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