Micron Technology 8JSF25664HZ-1G4D1 2GB vs G Skill Intl F4-2133C15-8GRR 8GB

总分

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

总分

G Skill Intl F4-2133C15-8GRR 8GB

G Skill Intl F4-2133C15-8GRR 8GB

差异规格评论

差异

Micron Technology 8JSF25664HZ-1G4D1 2GB

需要考虑的原因
Micron Technology 8JSF25664HZ-1G4D1 2GB

报告一个错误

G Skill Intl F4-2133C15-8GRR 8GB

需要考虑的原因
G Skill Intl F4-2133C15-8GRR 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 41

左右 -11% 更低的延时
更快的读取速度，GB/s

14.9 10.7

测试中的平均数值
更快的写入速度，GB/s

10.9 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Micron Technology 8JSF25664HZ-1G4D1 2GB

G Skill Intl F4-2133C15-8GRR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 37
读取速度，GB/s

10.7 14.9
写入速度，GB/s

7.5 10.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1335 2814

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3600C19-8GVRB 8GB

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G Skill Intl F4-3600C19-8GVSB 8GB

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Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

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G Skill Intl F4-3200C15-16GTZR 16GB

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A-DATA Technology DQVE1908 512MB

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Corsair VS1GSDS533D2 1GB

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Samsung M378B5673EH1-CF8 2GB

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Mushkin 99[2/7/4]208F 8GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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G Skill Intl F4-3000C14-16GVRD 16GB