Micron Technology 8JSF25664HZ-1G4D1 2GB vs G Skill Intl F4-2133C15-8GRR 8GB

总分

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

总分

G Skill Intl F4-2133C15-8GRR 8GB

G Skill Intl F4-2133C15-8GRR 8GB

差异规格评论

差异

Micron Technology 8JSF25664HZ-1G4D1 2GB

需要考虑的原因
Micron Technology 8JSF25664HZ-1G4D1 2GB

报告一个错误

G Skill Intl F4-2133C15-8GRR 8GB

需要考虑的原因
G Skill Intl F4-2133C15-8GRR 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 41

左右 -11% 更低的延时
更快的读取速度，GB/s

14.9 10.7

测试中的平均数值
更快的写入速度，GB/s

10.9 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Micron Technology 8JSF25664HZ-1G4D1 2GB

G Skill Intl F4-2133C15-8GRR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 37
读取速度，GB/s

10.7 14.9
写入速度，GB/s

7.5 10.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1335 2814

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Micron Technology 18ASF1G72PZ-2G1AV 8GB

Micron Technology 18ASF1G72PZ-2G1AV 8GB

Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

Crucial Technology BL8G32C16U4B.8FE 8GB

Crucial Technology BL8G32C16U4B.8FE 8GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB

GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Gloway International (HK) STK4U2400D15082C 8GB

Gloway International (HK) STK4U2400D15082C 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Corsair CMK64GX4M8A2666C16 8GB

Corsair CMK64GX4M8A2666C16 8GB

Samsung M378B1G73EB0-CK0 8GB

Samsung M378B1G73EB0-CK0 8GB

G Skill Intl F4-3200C14-16GFX 16GB

G Skill Intl F4-3200C14-16GFX 16GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMR16GX4M2Z3200C16 8GB

Corsair CMR16GX4M2Z3200C16 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Samsung M378A2K43CB1-CTD 16GB

Samsung M378A2K43CB1-CTD 16GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston 9905624-045.A00G 8GB

Kingston 9905624-045.A00G 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMD32GX4M4B3466C16 8GB

Corsair CMD32GX4M4B3466C16 8GB

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

Corsair CMD32GX4M4C3200C16-R 8GB

Corsair CMD32GX4M4C3200C16-R 8GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Kingmax Semiconductor GLLF62F-C6---------- 4GB

Kingmax Semiconductor GLLF62F-C6---------- 4GB

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

G Skill Intl F4-2400C17-4GVR 4GB

G Skill Intl F4-2400C17-4GVR 4GB