SK Hynix HYMP112U64CP8-Y5 1GB vs Corsair CMD32GX4M4C3200C16-R 8GB

总分

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

总分

Corsair CMD32GX4M4C3200C16-R 8GB

Corsair CMD32GX4M4C3200C16-R 8GB

差异规格评论

差异

SK Hynix HYMP112U64CP8-Y5 1GB

需要考虑的原因
SK Hynix HYMP112U64CP8-Y5 1GB

报告一个错误

更快的读取速度，GB/s

4 17.5

测试中的平均数值

Corsair CMD32GX4M4C3200C16-R 8GB

需要考虑的原因
Corsair CMD32GX4M4C3200C16-R 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 62

左右 -100% 更低的延时
更快的写入速度，GB/s

14.5 1,658.4

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

SK Hynix HYMP112U64CP8-Y5 1GB

Corsair CMD32GX4M4C3200C16-R 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 31
读取速度，GB/s

4,216.7 17.5
写入速度，GB/s

1,658.4 14.5
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

688 3510

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT102464BD160B.M16 8GB

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Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

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Samsung M378B5173EB0-CK0 4GB

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Kingston 9965525-155.A00LF 8GB

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Micron Technology 8R8F1G64HZ-2G3B1 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Kingmax Semiconductor GSLG42F-18---------- 8GB

Kingmax Semiconductor GSLG42F-18---------- 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Samsung M378A1K43BB1-CRC 8GB

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Samsung M471B1G73QH0-YK0 8GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Crucial Technology CT8G4DFD8213.C16FAD1 8GB

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Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Apacer Technology 78.DAGP2.4030B 16GB

Apacer Technology 78.DAGP2.4030B 16GB