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Nanya Technology M2F2G64CB88B7N-CG 2GB
Samsung M393A2K43BB1-CRC 16GB

Nanya Technology M2F2G64CB88B7N-CG 2GB vs Samsung M393A2K43BB1-CRC 16GB

总分
star star star star star
Nanya Technology M2F2G64CB88B7N-CG 2GB

Nanya Technology M2F2G64CB88B7N-CG 2GB

总分
star star star star star
Samsung M393A2K43BB1-CRC 16GB

Samsung M393A2K43BB1-CRC 16GB

差异 规格 评论

差异

Nanya Technology M2F2G64CB88B7N-CG 2GB 需要考虑的原因
Nanya Technology M2F2G64CB88B7N-CG 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 53
    左右 51% 更低的延时
  • 更快的读取速度，GB/s
    12.1 left arrow 10.4
    测试中的平均数值
Samsung M393A2K43BB1-CRC 16GB 需要考虑的原因
Samsung M393A2K43BB1-CRC 16GB
报告一个错误
  • 更快的写入速度，GB/s
    7.8 left arrow 7.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F2G64CB88B7N-CG 2GB
Samsung M393A2K43BB1-CRC 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 53
  • 读取速度，GB/s
    12.1 left arrow 10.4
  • 写入速度，GB/s
    7.2 left arrow 7.8
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1676 left arrow 2333

Nanya Technology M2F2G64CB88B7N-CG 2GB RAM的比较

SK Hynix HMT325U6CFR8C-H9 2GB
Kingston KHX2400C15D4/4G 4GB

Samsung M393A2K43BB1-CRC 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Crucial Technology CT8G4SFS824A.C8FJ 8GB
Crucial Technology CT8G4SFS824A.C8FJ 8GB
内存RAM
Kingston MSI26D4S9D8ME-16 16GB
Kingston MSI26D4S9D8ME-16 16GB
Crucial Technology CT16G4DFD8266.M16FE 16GB
Crucial Technology CT16G4DFD8266.M16FE 16GB
内存RAM
Ramaxel Technology RMR5030ME68F9F1600 4GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Crucial Technology CT8G4SFS632A.C4FE 8GB
Crucial Technology CT8G4SFS632A.C4FE 8GB
内存RAM
SK Hynix HMT425S6AFR6A-PB 2GB
SK Hynix HMT425S6AFR6A-PB 2GB
OCMEMORY OCM2933CL16-16GBH 16GB
OCMEMORY OCM2933CL16-16GBH 16GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
Corsair CMU16GX4M2D3200C16 8GB
Corsair CMU16GX4M2D3200C16 8GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
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AMD R948G2806U2S 8GB
AMD R948G2806U2S 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CMK32GX4M2A2133C13 16GB
Corsair CMK32GX4M2A2133C13 16GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
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Crucial Technology BLS16G4D240FSC.16FBR 16GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
Wilk Elektronik S.A. GR2400S464L17/16G 16GB
Wilk Elektronik S.A. GR2400S464L17/16G 16GB
内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
Dust Leopard DDR4-2400 CL17 8GB 8GB
Dust Leopard DDR4-2400 CL17 8GB 8GB
内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
V-Color Technology Inc. TD416G26D819-VC 16GB
V-Color Technology Inc. TD416G26D819-VC 16GB
内存RAM
Kingston 99P5471-016.A00LF 8GB
Kingston 99P5471-016.A00LF 8GB
Corsair CMK32GX4M4D3600C18 8GB
Corsair CMK32GX4M4D3600C18 8GB
内存RAM
Kingston KTC1G-UDIMM 1GB
Kingston KTC1G-UDIMM 1GB
G Skill Intl F4-4800C19-8GTZRC 8GB
G Skill Intl F4-4800C19-8GTZRC 8GB
内存RAM