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Nanya Technology M2F4G64CB8HB9N-CG 4GB
Kingston XF875V-HYA 8GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB vs Kingston XF875V-HYA 8GB

总分
star star star star star
Nanya Technology M2F4G64CB8HB9N-CG 4GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB

总分
star star star star star
Kingston XF875V-HYA 8GB

Kingston XF875V-HYA 8GB

差异 规格 评论

差异

Nanya Technology M2F4G64CB8HB9N-CG 4GB 需要考虑的原因
Nanya Technology M2F4G64CB8HB9N-CG 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 39
    左右 38% 更低的延时
Kingston XF875V-HYA 8GB 需要考虑的原因
Kingston XF875V-HYA 8GB
报告一个错误
  • 更快的读取速度，GB/s
    13.3 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.4 left arrow 8.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2F4G64CB8HB9N-CG 4GB
Kingston XF875V-HYA 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 39
  • 读取速度，GB/s
    13.2 left arrow 13.3
  • 写入速度，GB/s
    8.8 left arrow 11.4
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2301 left arrow 2274

Nanya Technology M2F4G64CB8HB9N-CG 4GB RAM的比较

Nanya Technology M2F4G64CB8HD5N-CG 4GB
Kingston 9905678-024.A00G 4GB

Kingston XF875V-HYA 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Kingston 9905584-016.A00LF 4GB
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Micron Technology AFLD48EH1P 8GB
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Kingston 9965640-035.C00G 32GB
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内存RAM
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Micron Technology 16JTF51264HZ-1G6M1 4GB
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内存RAM
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Samsung M386B4G70DM0-CMA4 32GB
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G Skill Intl F4-2800C15-8GRBB 8GB
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