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ASint Technology SSA302G08-EGN1C 4GB
Ramaxel Technology RMSA3270MB86H9F2400 4GB
比较
ASint Technology SSA302G08-EGN1C 4GB vs Ramaxel Technology RMSA3270MB86H9F2400 4GB
总分
ASint Technology SSA302G08-EGN1C 4GB
总分
Ramaxel Technology RMSA3270MB86H9F2400 4GB
差异
规格
评论
差异
需要考虑的原因
ASint Technology SSA302G08-EGN1C 4GB
报告一个错误
低于PassMark测试中的延时,ns
26
39
左右 33% 更低的延时
更快的写入速度,GB/s
9.5
9.4
测试中的平均数值
需要考虑的原因
Ramaxel Technology RMSA3270MB86H9F2400 4GB
报告一个错误
更快的读取速度,GB/s
14.4
12.6
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
ASint Technology SSA302G08-EGN1C 4GB
Ramaxel Technology RMSA3270MB86H9F2400 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
39
读取速度,GB/s
12.6
14.4
写入速度,GB/s
9.5
9.4
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2174
1966
ASint Technology SSA302G08-EGN1C 4GB RAM的比较
Samsung M471B5273CH0-CH9 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Ramaxel Technology RMSA3270MB86H9F2400 4GB RAM的比较
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology CT51264AC800.C16FC 4GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
G Skill Intl F4-3200C16-8GFX 8GB
Kingston KF560C40-16 16GB
Micron Technology AFLD44EK2P 4GB
Kingston 2GB-DDR2 800Mhz 2GB
SanMax Technologies Inc. SMD4-U8G28MA-21P 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
G Skill Intl F4-2400C17-8GVR 8GB
Corsair CMV4GX3M1B1600C11 4GB
G Skill Intl F4-3600C16-16GVKC 16GB
Apacer Technology 78.B1GET.AU00C 4GB
Kingston KHX3000C15D4/8GX 8GB
ASint Technology SSA302G08-EGN1C 4GB
Crucial Technology BLS8G4D240FSE.16FBR2 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT32G4SFD8266.C16FB 32GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-3300C16-8GTZKW 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BLS4G4D240FSA.8FARG 4GB
A-DATA Technology DQKD1A08 1GB
Teikon TMA81GS6CJR8N-VKSC 8GB
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-4000C15-8GTRG 8GB
Kingston KHX1600C9D3/8G 8GB
Kingmax Semiconductor GLNH23F-18---------- 16GB
报告一个错误
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Bug description
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