Nanya Technology M2F8G64CB8HC5N-DI 8GB vs Kingston KHX3200C20S4/16GX 16GB

总分

Nanya Technology M2F8G64CB8HC5N-DI 8GB

Nanya Technology M2F8G64CB8HC5N-DI 8GB

总分

Kingston KHX3200C20S4/16GX 16GB

Kingston KHX3200C20S4/16GX 16GB

差异规格评论

差异

Nanya Technology M2F8G64CB8HC5N-DI 8GB

需要考虑的原因
Nanya Technology M2F8G64CB8HC5N-DI 8GB

报告一个错误

Kingston KHX3200C20S4/16GX 16GB

需要考虑的原因
Kingston KHX3200C20S4/16GX 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 39

左右 -11% 更低的延时
更快的读取速度，GB/s

17.2 15.4

测试中的平均数值
更快的写入速度，GB/s

15.8 9.9

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2F8G64CB8HC5N-DI 8GB

Kingston KHX3200C20S4/16GX 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 35
读取速度，GB/s

15.4 17.2
写入速度，GB/s

9.9 15.8
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2614 3415

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Kingston 9905622-055.A00G 4GB

Kingston 9905622-055.A00G 4GB

Nanya Technology M2F8G64CB8HC5N-DI 8GB

Nanya Technology M2F8G64CB8HC5N-DI 8GB

Kingston KHX3200C20S4/16GX 16GB

Kingston KHX3200C20S4/16GX 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Crucial Technology BL8G30C15U4WL.M8FE1 8GB

Crucial Technology BL8G30C15U4WL.M8FE1 8GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

Kingston HP26D4U9D8HC-16X 16GB

Kingston HP26D4U9D8HC-16X 16GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

V-Color Technology Inc. TL48G36S8KBNRGB18 8GB

V-Color Technology Inc. TL48G36S8KBNRGB18 8GB

Samsung M471B1G73EB0-YK0 8GB

Samsung M471B1G73EB0-YK0 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N

Kingston 99U5474-023.A00LF 4GB

Kingston 99U5474-023.A00LF 4GB

Crucial Technology CT8G4DFS8266.M8FD 8GB

Crucial Technology CT8G4DFS8266.M8FD 8GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Micron Technology 16ATF2G64HZ-2G3H1 16GB

Micron Technology 16ATF2G64HZ-2G3H1 16GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Crucial Technology CT8G4DFS8213.C8FBR1 8GB

Crucial Technology CT8G4DFS8213.C8FBR1 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology CT8G4SFS8266.C8FJ 8GB

Crucial Technology CT8G4SFS8266.C8FJ 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

G Skill Intl F4-3866C18-8GTZSW 8GB

G Skill Intl F4-3866C18-8GTZSW 8GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

InnoDisk Corporation 16GB

InnoDisk Corporation 16GB