RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
比较
Nanya Technology M2F8G64CB8HC9N-DI 8GB vs Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
总分
Nanya Technology M2F8G64CB8HC9N-DI 8GB
总分
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology M2F8G64CB8HC9N-DI 8GB
报告一个错误
低于PassMark测试中的延时,ns
37
73
左右 49% 更低的延时
更快的写入速度,GB/s
8.6
7.9
测试中的平均数值
需要考虑的原因
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
报告一个错误
更快的读取速度,GB/s
15.1
13.9
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
37
73
读取速度,GB/s
13.9
15.1
写入速度,GB/s
8.6
7.9
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2395
1724
Nanya Technology M2F8G64CB8HC9N-DI 8GB RAM的比较
SK Hynix HMT41GR7AFR4C-PB 8GB
Kingston 99P5474-050.A00LF 4GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB RAM的比较
TwinMOS 8DHE3MN8-HATP 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair VSA2GSDS667C4 2GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Essencore Limited KD48GU88C-26N1600 8GB
Gold Key Technology Co Ltd GKE160SO102408-2400 16GB
Kingston 9905403-156.A00LF 2GB
Corsair CM4X8GD3200C16K4 8GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Corsair CM4X8GF2666C16K4 8GB
Kingston 9965516-112.A00LF 16GB
G Skill Intl F4-3200C16-8GRS 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Kingston X0N6VG-HYD2 16GB
Kingston KVR533D2N4 512MB
G Skill Intl F4-4000C15-8GTRG 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Super Talent F26UB16GH 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SK Hynix HMA82GS6DJR8N-XN 16GB
G Skill Intl F3-1333C9-4GIS 4GB
Corsair CMWX8GD3600C18W4 8GB
Kingston 9905403-500.A01LF 8GB
Patriot Memory (PDP Systems) PSD48G240081 8GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3200C16-8GSX 8GB
Kingston ACR256X64D3S1333C9 2GB
Asgard VMA41UF-MEC1U2BQ2 4GB
报告一个错误
×
Bug description
Source link