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Nanya Technology M2X4G64CB8HG5N-DG 4GB
Crucial Technology BLS8G4D240FSA.16FARG 8GB

Nanya Technology M2X4G64CB8HG5N-DG 4GB vs Crucial Technology BLS8G4D240FSA.16FARG 8GB

总分
star star star star star
Nanya Technology M2X4G64CB8HG5N-DG 4GB

Nanya Technology M2X4G64CB8HG5N-DG 4GB

总分
star star star star star
Crucial Technology BLS8G4D240FSA.16FARG 8GB

Crucial Technology BLS8G4D240FSA.16FARG 8GB

差异 规格 评论

差异

Nanya Technology M2X4G64CB8HG5N-DG 4GB 需要考虑的原因
Nanya Technology M2X4G64CB8HG5N-DG 4GB
报告一个错误
Crucial Technology BLS8G4D240FSA.16FARG 8GB 需要考虑的原因
Crucial Technology BLS8G4D240FSA.16FARG 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 39
    左右 -8% 更低的延时
  • 更快的读取速度，GB/s
    15.1 left arrow 13.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.1 left arrow 9.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Crucial Technology BLS8G4D240FSA.16FARG 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 36
  • 读取速度，GB/s
    13.7 left arrow 15.1
  • 写入速度，GB/s
    9.7 left arrow 11.1
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2431 left arrow 2800

Nanya Technology M2X4G64CB8HG5N-DG 4GB RAM的比较

Samsung M378B5673EH1-CF8 2GB
AMD R538G1601U2S 8GB

Crucial Technology BLS8G4D240FSA.16FARG 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M378A1G43EB1-CPB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Crucial Technology BLS8G4D240FSA.16FARG 8GB
Crucial Technology BLS8G4D240FSA.16FARG 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
Crucial Technology CT8G4SFS8266.M8FD 8GB
Crucial Technology CT8G4SFS8266.M8FD 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Kingston 9905663-008.A00G 16GB
Kingston 9905663-008.A00G 16GB
内存RAM
Kingston KHX16LC9/8GX 8GB
Kingston KHX16LC9/8GX 8GB
Corsair CMK64GX4M2E3200C16 32GB
Corsair CMK64GX4M2E3200C16 32GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Kingston KCDT82-MIE 4GB
Kingston KCDT82-MIE 4GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
G Skill Intl F4-2800C15-4GTZ 4GB
G Skill Intl F4-2800C15-4GTZ 4GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
G Skill Intl F4-3600C18-32GTRG 32GB
G Skill Intl F4-3600C18-32GTRG 32GB
内存RAM
Samsung M378A1G43EB1-CRC 8GB
Samsung M378A1G43EB1-CRC 8GB
Samsung M378A1K43CB2-CRC 8GB
Samsung M378A1K43CB2-CRC 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Transcend Information TS1GLH72V1H 8GB
Transcend Information TS1GLH72V1H 8GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
SK Hynix HMA81GS6DJR8N-VK 8GB
SK Hynix HMA81GS6DJR8N-VK 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Corsair CMD32GX4M2C3466C16W 16GB
Corsair CMD32GX4M2C3466C16W 16GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Micron Technology 16ATF4G64HZ-3G2B2 32GB
Micron Technology 16ATF4G64HZ-3G2B2 32GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Smart Modular SF4641G8CK8IEGKSBG 8GB
Smart Modular SF4641G8CK8IEGKSBG 8GB
内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
Kingston 9905678-058.A00G 4GB
Kingston 9905678-058.A00G 4GB
内存RAM