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Nanya Technology M2Y1G64TU8HB0B-25C 1GB
SK Hynix HMA451U6MFR8N-TF 4GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB vs SK Hynix HMA451U6MFR8N-TF 4GB

总分
star star star star star
Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

总分
star star star star star
SK Hynix HMA451U6MFR8N-TF 4GB

SK Hynix HMA451U6MFR8N-TF 4GB

差异 规格 评论

差异

Nanya Technology M2Y1G64TU8HB0B-25C 1GB 需要考虑的原因
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 13.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,077.3 left arrow 10.3
    测试中的平均数值
SK Hynix HMA451U6MFR8N-TF 4GB 需要考虑的原因
SK Hynix HMA451U6MFR8N-TF 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 61
    左右 -69% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
SK Hynix HMA451U6MFR8N-TF 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    61 left arrow 36
  • 读取速度，GB/s
    3,835.2 left arrow 13.4
  • 写入速度，GB/s
    2,077.3 left arrow 10.3
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    606 left arrow 2466

Nanya Technology M2Y1G64TU8HB0B-25C 1GB RAM的比较

SK Hynix HYMP512U64CP8-Y5 1GB
Kingston 99U5701-036.A00G 16GB

SK Hynix HMA451U6MFR8N-TF 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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G Skill Intl F3-2133C9-4GAB 4GB
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Nanya Technology NT2GT64U8HD0BN-AD 2GB
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G Skill Intl F3-1866C8-8GTX 8GB
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SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB
内存RAM
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内存RAM
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