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Nanya Technology NT2GT64U8HD0BN-AD 2GB
G Skill Intl F4-3400C16-16GTZ 16GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB vs G Skill Intl F4-3400C16-16GTZ 16GB

总分
star star star star star
Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

总分
star star star star star
G Skill Intl F4-3400C16-16GTZ 16GB

G Skill Intl F4-3400C16-16GTZ 16GB

差异 规格 评论

差异

Nanya Technology NT2GT64U8HD0BN-AD 2GB 需要考虑的原因
Nanya Technology NT2GT64U8HD0BN-AD 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 17.9
    测试中的平均数值
G Skill Intl F4-3400C16-16GTZ 16GB 需要考虑的原因
G Skill Intl F4-3400C16-16GTZ 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 72
    左右 -227% 更低的延时
  • 更快的写入速度，GB/s
    13.8 left arrow 1,938.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GT64U8HD0BN-AD 2GB
G Skill Intl F4-3400C16-16GTZ 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    72 left arrow 22
  • 读取速度，GB/s
    4,241.0 left arrow 17.9
  • 写入速度，GB/s
    1,938.7 left arrow 13.8
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    677 left arrow 3297

Nanya Technology NT2GT64U8HD0BN-AD 2GB RAM的比较

Protocol Engines Kingrock 800 2GB 2GB
Patriot Memory (PDP Systems) PSD22G8002S 2GB

G Skill Intl F4-3400C16-16GTZ 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix HMT451U7BFR8C-RD 4GB
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Essencore Limited KD44GU480-26N160T 4GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
G Skill Intl F4-3400C16-16GTZ 16GB
G Skill Intl F4-3400C16-16GTZ 16GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Corsair CM4X8GE2400C16K4 8GB
Corsair CM4X8GE2400C16K4 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Panram International Corporation PUD42133C158G2VS 8GB
Panram International Corporation PUD42133C158G2VS 8GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
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Transcend Information JM2400HSB-8G 8GB
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Kingston KVR533D2N4 512MB
Micron Technology 36ASF2G72LZ-2G1A1 16GB
Micron Technology 36ASF2G72LZ-2G1A1 16GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Micron Technology 18ADF2G72AZ-2G6E1 16GB
Micron Technology 18ADF2G72AZ-2G6E1 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Asgard VMA44UG-MEC1U2AW1 8GB
Asgard VMA44UG-MEC1U2AW1 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
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Crucial Technology CT16G4DFRA32A.C16FN 16GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
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G Skill Intl F4-3600C19-16GSXF 16GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology BLS8G4D240FSA.M16FAD 8GB
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内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
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Samsung M474A1G43DB0-CPB 8GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Ramaxel Technology RMUA5120ME86H9F-2666 4GB
Ramaxel Technology RMUA5120ME86H9F-2666 4GB
内存RAM