Nanya Technology NT4GC72B4NA1NL-CG 4GB vs A-DATA Technology AO1E34RCTV2-BZWS 32GB

总分

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分

A-DATA Technology AO1E34RCTV2-BZWS 32GB

A-DATA Technology AO1E34RCTV2-BZWS 32GB

差异规格评论

差异

Nanya Technology NT4GC72B4NA1NL-CG 4GB

需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB

报告一个错误

低于PassMark测试中的延时，ns

42 60

左右 30% 更低的延时

A-DATA Technology AO1E34RCTV2-BZWS 32GB

需要考虑的原因
A-DATA Technology AO1E34RCTV2-BZWS 32GB

报告一个错误

更快的读取速度，GB/s

16.6 10.6

测试中的平均数值
更快的写入速度，GB/s

15.3 7.8

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC72B4NA1NL-CG 4GB

A-DATA Technology AO1E34RCTV2-BZWS 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 60
读取速度，GB/s

10.6 16.6
写入速度，GB/s

7.8 15.3
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2150 2813

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Avant Technology J641GU42J7240N3 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Corsair CMW64GX4M4C3466C16 16GB

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Kingston 99U5403-036.A00G 4GB

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Apacer Technology 78.C1GMM.DFW0C 8GB

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Kingston 9965525-018.A00LF 4GB

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PUSKILL PJ16TFK1GM8 16GB

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Kingston 9905584-016.A00LF 4GB

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G Skill Intl F4-3200C22-16GRS 16GB

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Samsung M393A1G43EB1-CRC 8GB

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SK Hynix HMT41GU7BFR8C-RD 8GB

G Skill Intl F4-3600C18-32GVK 32GB

G Skill Intl F4-3600C18-32GVK 32GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

G Skill Intl F4-3200C15-4GRKD 4GB

G Skill Intl F4-3200C15-4GRKD 4GB

G Skill Intl F3-1600C11-4GIS 4GB

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Samsung M471A5244BB0-CRC 4GB

Samsung M471A5244BB0-CRC 4GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Corsair CM4X16GC3600C18K2D 16GB

Corsair CM4X16GC3600C18K2D 16GB