Nanya Technology NT512T64U88B0BY-3C 512MB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB

总分

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB

差异规格评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB

需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB

报告一个错误

更快的读取速度，GB/s

2 11.1

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 71

左右 -109% 更低的延时
更快的写入速度，GB/s

9.5 1,322.6

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT512T64U88B0BY-3C 512MB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

71 34
读取速度，GB/s

2,831.6 11.1
写入速度，GB/s

1,322.6 9.5
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

399 2319

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology NT512T64U88B0BY-3C 512MB

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Crucial Technology CT16G4SFS832A.C8FB 16GB

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Samsung M393B5270CH0-CH9 4GB

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Samsung M378A1K43EB2-CWE 8GB

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Corsair CMX8GX3M2A1600C11 4GB

Corsair CM4X4GF2400C14K4 4GB

Corsair CM4X4GF2400C14K4 4GB