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Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston MSI24D4S7S7MH-16 16GB
比较
Nanya Technology NT512T64U88B0BY-3C 512MB vs Kingston MSI24D4S7S7MH-16 16GB
总分
Nanya Technology NT512T64U88B0BY-3C 512MB
总分
Kingston MSI24D4S7S7MH-16 16GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB
报告一个错误
更快的读取速度,GB/s
2
13.4
测试中的平均数值
需要考虑的原因
Kingston MSI24D4S7S7MH-16 16GB
报告一个错误
低于PassMark测试中的延时,ns
25
71
左右 -184% 更低的延时
更快的写入速度,GB/s
7.3
1,322.6
测试中的平均数值
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston MSI24D4S7S7MH-16 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
71
25
读取速度,GB/s
2,831.6
13.4
写入速度,GB/s
1,322.6
7.3
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
399
2098
Nanya Technology NT512T64U88B0BY-3C 512MB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
Kingston MSI24D4S7S7MH-16 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston MSI24D4S7S7MH-16 16GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Apacer Technology 78.BAGM6.40C0B 4GB
AMD AE34G2139U2 4GB
Gold Key Technology Co Ltd NMUD416E82-4400G 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
Micron Technology 18ASF2G72PZ-2G3B1 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Crucial Technology CT8G4SFS824A.M8FA 8GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Corsair CMW64GX4M2E3200C16 32GB
Crucial Technology CT102464BA160B.M16 8GB
Corsair CMSX16GX4M2A3000C16 8GB
AMD AE34G2139U2 4GB
Crucial Technology BL16G36C16U4B.M16FE1 16GB
SK Hynix DDR2 800 2G 2GB
Gloway International Co. Ltd. TYA4U2666D19081C 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Crucial Technology BLS8G4D26BFSBK.8FBD 8GB
Crucial Technology CT51264AC800.C16FC 4GB
Kingston 9905712-048.A00G 16GB
Samsung M393B1K70CH0-CH9 8GB
AMD R744G2400U1S-UO 4GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-4000C18-8GTZKW 8GB
Samsung M471B5273DH0-CH9 4GB
Samsung M393A2K43BB1-CPB 16GB
报告一个错误
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Bug description
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