Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Micron Technology 18ASF2G72PDZ-2G3A1 16GB

总分

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分

Micron Technology 18ASF2G72PDZ-2G3A1 16GB

Micron Technology 18ASF2G72PDZ-2G3A1 16GB

差异规格评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

报告一个错误

低于PassMark测试中的延时，ns

35 41

左右 15% 更低的延时
更快的读取速度，GB/s

13.7 7.7

测试中的平均数值
更快的写入速度，GB/s

9.6 7.6

测试中的平均数值

Micron Technology 18ASF2G72PDZ-2G3A1 16GB

需要考虑的原因
Micron Technology 18ASF2G72PDZ-2G3A1 16GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Micron Technology 18ASF2G72PDZ-2G3A1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 41
读取速度，GB/s

13.7 7.7
写入速度，GB/s

9.6 7.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2312 1855

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

Corsair CMK8GX4M1Z3200C16 8GB

Corsair CMK8GX4M1Z3200C16 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB

Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Corsair CMR32GX4M4D3200C16 8GB

Corsair CMR32GX4M4D3200C16 8GB

Corsair CMD8GX3M2A2800C12 4GB

Corsair CMD8GX3M2A2800C12 4GB

Kingston KHX2933C15D4/8GX 8GB

Kingston KHX2933C15D4/8GX 8GB

Kingston KHX1866C10D3/4G 4GB

Kingston KHX1866C10D3/4G 4GB

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Kllisre HMA81GU6AFR8N-VK 8GB

Kllisre HMA81GU6AFR8N-VK 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Corsair CMR64GX4M4C3333C16 16GB

Corsair CMR64GX4M4C3333C16 16GB

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

G Skill Intl F4-4266C19-8GTZA 8GB

G Skill Intl F4-4266C19-8GTZA 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Teikon TMA851U6AFR6N-UHHC 4GB

Teikon TMA851U6AFR6N-UHHC 4GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

G Skill Intl F4-3600C16-16GTZN 16GB

G Skill Intl F4-3600C16-16GTZN 16GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

G Skill Intl F4-3200C16-8GSXWB 8GB

G Skill Intl F4-3200C16-8GSXWB 8GB

Corsair CMD16GX3M4A2666C11 4GB

Corsair CMD16GX3M4A2666C11 4GB

Crucial Technology BL8G36C16U4RL.M8FE1 8GB

Crucial Technology BL8G36C16U4RL.M8FE1 8GB

Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F4-3600C16-16GTZN 16GB

G Skill Intl F4-3600C16-16GTZN 16GB