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Patriot Memory (PDP Systems) PSD416G26662S 16GB
Micron Technology 4ATF51264HZ-2G6E3 4GB

Patriot Memory (PDP Systems) PSD416G26662S 16GB vs Micron Technology 4ATF51264HZ-2G6E3 4GB

总分
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Patriot Memory (PDP Systems) PSD416G26662S 16GB

Patriot Memory (PDP Systems) PSD416G26662S 16GB

总分
star star star star star
Micron Technology 4ATF51264HZ-2G6E3 4GB

Micron Technology 4ATF51264HZ-2G6E3 4GB

差异 规格 评论

差异

Patriot Memory (PDP Systems) PSD416G26662S 16GB 需要考虑的原因
Patriot Memory (PDP Systems) PSD416G26662S 16GB
报告一个错误
  • 更快的写入速度，GB/s
    14.1 left arrow 12.5
    测试中的平均数值
Micron Technology 4ATF51264HZ-2G6E3 4GB 需要考虑的原因
Micron Technology 4ATF51264HZ-2G6E3 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 33
    左右 -6% 更低的延时
  • 更快的读取速度，GB/s
    16.6 left arrow 16.4
    测试中的平均数值

规格

完整的技术规格清单
Patriot Memory (PDP Systems) PSD416G26662S 16GB
Micron Technology 4ATF51264HZ-2G6E3 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    33 left arrow 31
  • 读取速度，GB/s
    16.4 left arrow 16.6
  • 写入速度，GB/s
    14.1 left arrow 12.5
  • 内存带宽，mbps
    21300 left arrow 21300
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    3214 left arrow 2605

Patriot Memory (PDP Systems) PSD416G26662S 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology 4ATF51264HZ-2G6E3 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Patriot Memory (PDP Systems) PSD416G26662S 16GB
Patriot Memory (PDP Systems) PSD416G26662S 16GB
Micron Technology 4ATF51264HZ-2G6E3 4GB
Micron Technology 4ATF51264HZ-2G6E3 4GB
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