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PNY Electronics PNY 2GB
Corsair CMT64GX4M4C3000C15 16GB

PNY Electronics PNY 2GB vs Corsair CMT64GX4M4C3000C15 16GB

总分
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分
star star star star star
Corsair CMT64GX4M4C3000C15 16GB

Corsair CMT64GX4M4C3000C15 16GB

差异 规格 评论

差异

PNY Electronics PNY 2GB 需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 29
    左右 7% 更低的延时
Corsair CMT64GX4M4C3000C15 16GB 需要考虑的原因
Corsair CMT64GX4M4C3000C15 16GB
报告一个错误
  • 更快的读取速度，GB/s
    17.3 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.9 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
PNY Electronics PNY 2GB
Corsair CMT64GX4M4C3000C15 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 29
  • 读取速度，GB/s
    13.8 left arrow 17.3
  • 写入速度，GB/s
    8.4 left arrow 13.9
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2274 left arrow 3432

PNY Electronics PNY 2GB RAM的比较

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

Corsair CMT64GX4M4C3000C15 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Samsung M4 70T5663QZ3-CE6 2GB
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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内存RAM
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Crucial Technology CT4G4SFS824A.C8FF 4GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
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内存RAM
SpecTek Incorporated PSD34G13332 4GB
SpecTek Incorporated PSD34G13332 4GB
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内存RAM
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Ramaxel Technology RMR5030ME68F9F1600 4GB
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Kingston 9905702-184.A00G 8GB
内存RAM
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
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Samsung M471A2G43AB2-CWE 16GB
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