PUSKILL DDR3 1600 8G 8GB vs Crucial Technology CT8G4DFD8213.C16FBD1 8GB

总分

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

总分

Crucial Technology CT8G4DFD8213.C16FBD1 8GB

Crucial Technology CT8G4DFD8213.C16FBD1 8GB

差异规格评论

差异

PUSKILL DDR3 1600 8G 8GB

需要考虑的原因
PUSKILL DDR3 1600 8G 8GB

报告一个错误

更快的读取速度，GB/s

16.7 16.6

测试中的平均数值

Crucial Technology CT8G4DFD8213.C16FBD1 8GB

需要考虑的原因
Crucial Technology CT8G4DFD8213.C16FBD1 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 38

左右 -15% 更低的延时
更快的写入速度，GB/s

11.8 10.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

PUSKILL DDR3 1600 8G 8GB

Crucial Technology CT8G4DFD8213.C16FBD1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 33
读取速度，GB/s

16.7 16.6
写入速度，GB/s

10.0 11.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2753 2947

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Crucial Technology CT8G4DFD8213.C16FBD1 8GB

Crucial Technology CT8G4DFD8213.C16FBD1 8GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Crucial Technology BLE4G4D30AEEA.K8FE 4GB

Crucial Technology BLE4G4D30AEEA.K8FE 4GB

Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

Samsung M391A2K43BB1-CRC 16GB

Samsung M391A2K43BB1-CRC 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Wilk Elektronik S.A. GY2133D464L15/8G 8GB

Wilk Elektronik S.A. GY2133D464L15/8G 8GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

G Skill Intl F4-3000C16-8GSXFB 8GB

G Skill Intl F4-3000C16-8GSXFB 8GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Kingston KHX2933C15D4/8GX 8GB

Kingston KHX2933C15D4/8GX 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

AMD R748G2606U2S 8GB

AMD R748G2606U2S 8GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB

Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

SK Hynix HMA81GU6AFR8N-UH 8GB

SK Hynix HMA81GU6AFR8N-UH 8GB

Crucial Technology CT16G4DFD8266.C16FP 16GB

Crucial Technology CT16G4DFD8266.C16FP 16GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

A-DATA Technology AO1P24HC8T1-BPGS 8GB

A-DATA Technology AO1P24HC8T1-BPGS 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology CT4G4SFS624A.C4FB 4GB

Crucial Technology CT4G4SFS624A.C4FB 4GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB