Ramaxel Technology RMR5040ED58E9W1600 4GB vs SK Hynix HMA41GR7AFR4N-UH 8GB

总分

Ramaxel Technology RMR5040ED58E9W1600 4GB

Ramaxel Technology RMR5040ED58E9W1600 4GB

总分

SK Hynix HMA41GR7AFR4N-UH 8GB

SK Hynix HMA41GR7AFR4N-UH 8GB

差异规格评论

差异

Ramaxel Technology RMR5040ED58E9W1600 4GB

需要考虑的原因
Ramaxel Technology RMR5040ED58E9W1600 4GB

报告一个错误

低于PassMark测试中的延时，ns

43 47

左右 9% 更低的延时
更快的读取速度，GB/s

13.2 11.6

测试中的平均数值
更快的写入速度，GB/s

9.3 8.4

测试中的平均数值

SK Hynix HMA41GR7AFR4N-UH 8GB

需要考虑的原因
SK Hynix HMA41GR7AFR4N-UH 8GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMR5040ED58E9W1600 4GB

SK Hynix HMA41GR7AFR4N-UH 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 47
读取速度，GB/s

13.2 11.6
写入速度，GB/s

9.3 8.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2285 2537

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KHX2666C15S4/16G 16GB

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G Skill Intl F4-4000C19-16GTZSW 16GB

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Apacer Technology 78.01G86.9H50C 1GB

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Corsair CMD16GX4M2B3000C15 8GB

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Kingston ACR16D3LFS1KBG/2G 2GB

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V-GEN D4H16GS24A8 16GB

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Micron Technology 36ASF4G72PZ-2G1A1 32GB

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Samsung M378A1G44BB0-CWE 8GB

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Samsung M3 78T2953EZ3-CF7 1GB

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Corsair CMR32GX4M2C3200C16 16GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Crucial Technology BL16G36C16U4R.M8FB1 16GB

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Ramaxel Technology RMR5030ME68F9F1600 4GB

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Corsair CMD32GX4M2C3466C16W 16GB

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Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

G Skill Intl F4-4000C16-8GTZR 8GB

G Skill Intl F4-4000C16-8GTZR 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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A-DATA Technology AM2P26KC8T1-BXRS 8GB