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Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Samsung M378A2K43CB1-CTD 16GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB vs Samsung M378A2K43CB1-CTD 16GB

总分
star star star star star
Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

总分
star star star star star
Samsung M378A2K43CB1-CTD 16GB

Samsung M378A2K43CB1-CTD 16GB

差异 规格 评论

差异

Ramaxel Technology RMSA3260NA78HAF-2666 8GB 需要考虑的原因
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
报告一个错误
Samsung M378A2K43CB1-CTD 16GB 需要考虑的原因
Samsung M378A2K43CB1-CTD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 42
    左右 -27% 更低的延时
  • 更快的读取速度，GB/s
    16.2 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 7.8
    测试中的平均数值

规格

完整的技术规格清单
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Samsung M378A2K43CB1-CTD 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 33
  • 读取速度，GB/s
    13.3 left arrow 16.2
  • 写入速度，GB/s
    7.8 left arrow 12.0
  • 内存带宽，mbps
    21300 left arrow 21300
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2181 left arrow 3116

Ramaxel Technology RMSA3260NA78HAF-2666 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Samsung M378A2K43CB1-CTD 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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