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Ramaxel Technology RMT3010EC58E8F1333 2GB
SK Hynix V-GeN D4H4GL26A8TL 4GB

Ramaxel Technology RMT3010EC58E8F1333 2GB vs SK Hynix V-GeN D4H4GL26A8TL 4GB

总分
star star star star star
Ramaxel Technology RMT3010EC58E8F1333 2GB

Ramaxel Technology RMT3010EC58E8F1333 2GB

总分
star star star star star
SK Hynix V-GeN D4H4GL26A8TL 4GB

SK Hynix V-GeN D4H4GL26A8TL 4GB

差异 规格 评论

差异

Ramaxel Technology RMT3010EC58E8F1333 2GB 需要考虑的原因
Ramaxel Technology RMT3010EC58E8F1333 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 68
    左右 62% 更低的延时
SK Hynix V-GeN D4H4GL26A8TL 4GB 需要考虑的原因
SK Hynix V-GeN D4H4GL26A8TL 4GB
报告一个错误
  • 更快的读取速度，GB/s
    16.2 left arrow 13.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.1 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Ramaxel Technology RMT3010EC58E8F1333 2GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 68
  • 读取速度，GB/s
    13.5 left arrow 16.2
  • 写入速度，GB/s
    7.8 left arrow 8.1
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1932 left arrow 1812

Ramaxel Technology RMT3010EC58E8F1333 2GB RAM的比较

Nanya Technology M2S2G64CB88G5N-DI 2GB
Micron Technology 16ATF1G64AZ-2G1A1 8GB

SK Hynix V-GeN D4H4GL26A8TL 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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