Ramaxel Technology RMT3160ED58E9W1600 4GB vs Shenzhen Xingmem Technology Corp 16GB

总分

Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

总分

Shenzhen Xingmem Technology Corp 16GB

Shenzhen Xingmem Technology Corp 16GB

差异规格评论

差异

Ramaxel Technology RMT3160ED58E9W1600 4GB

需要考虑的原因
Ramaxel Technology RMT3160ED58E9W1600 4GB

报告一个错误

低于PassMark测试中的延时，ns

40 43

左右 7% 更低的延时

Shenzhen Xingmem Technology Corp 16GB

需要考虑的原因
Shenzhen Xingmem Technology Corp 16GB

报告一个错误

更快的读取速度，GB/s

14.3 12.3

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Ramaxel Technology RMT3160ED58E9W1600 4GB

Shenzhen Xingmem Technology Corp 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 43
读取速度，GB/s

12.3 14.3
写入速度，GB/s

7.8 7.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1806 2128

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL16G26C16U4R.16FE 16GB

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Team Group Inc. DDR4 3600 8GB

Team Group Inc. DDR4 3600 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 36ASF4G72PZ-2G6H1 32GB

Micron Technology 36ASF4G72PZ-2G6H1 32GB

Kingston KHX16LC9/8GX 8GB

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Transcend Information TS2GSH64V4B 16GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

Smart Modular SMU4WEC8C1K0464FCG 8GB

Smart Modular SMU4WEC8C1K0464FCG 8GB