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Samsung 1600 CL10 Series 8GB
A-DATA Technology DDR4 3600 2OZ 8GB
比较
Samsung 1600 CL10 Series 8GB vs A-DATA Technology DDR4 3600 2OZ 8GB
总分
Samsung 1600 CL10 Series 8GB
总分
A-DATA Technology DDR4 3600 2OZ 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
需要考虑的原因
A-DATA Technology DDR4 3600 2OZ 8GB
报告一个错误
更快的读取速度,GB/s
19
16.1
测试中的平均数值
更快的写入速度,GB/s
14.9
10.1
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Samsung 1600 CL10 Series 8GB
A-DATA Technology DDR4 3600 2OZ 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
25
25
读取速度,GB/s
16.1
19.0
写入速度,GB/s
10.1
14.9
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2764
3683
Samsung 1600 CL10 Series 8GB RAM的比较
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
A-DATA Technology DDR4 3600 2OZ 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HYMP112U64CP8-S5 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung 1600 CL10 Series 8GB
A-DATA Technology DDR4 3600 2OZ 8GB
Kingston 9965525-018.A00LF 4GB
Essencore Limited IM48GU88N24-FFFHAB 8GB
Samsung M471B5773DH0-CK0 2GB
Lexar Co Limited LD4AU008G-H3200GST 8GB
G Skill Intl F5-6400J3239G16G 16GB
Corsair CM4X16GE2133C15S2 16GB
PNY Electronics PNY 2GB
Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB
Samsung M393B1K70CH0-YH9 8GB
Apacer Technology GD2.0918CT.001 4GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMD64GX4M8X4000C19 8GB
Kingston ACR256X64D3S1333C9 2GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
Kingston 99U5471-030.A00LF 8GB
SK Hynix HMAA2GS6AJR8N-XN 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston 9905713-019.A00G 4GB
Kingston 9965525-018.A00LF 4GB
Teikon TMA81GS6CJR8N-VKSC 8GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology CT16G4SFD8266.M16FE 16GB
Patriot Memory (PDP Systems) 2400 CL11 Series 8GB
G Skill Intl F4-3200C18-16GRS 16GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Smart Modular SMS4WEC3C0K0446SCG 4GB
报告一个错误
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