Samsung 1600 CL10 Series 8GB vs G Skill Intl F4-3200C15-8GTZKW 8GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

G Skill Intl F4-3200C15-8GTZKW 8GB

G Skill Intl F4-3200C15-8GTZKW 8GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

G Skill Intl F4-3200C15-8GTZKW 8GB

需要考虑的原因
G Skill Intl F4-3200C15-8GTZKW 8GB

报告一个错误

低于PassMark测试中的延时，ns

18 25

左右 -39% 更低的延时
更快的读取速度，GB/s

19.9 16.1

测试中的平均数值
更快的写入速度，GB/s

15.3 10.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

G Skill Intl F4-3200C15-8GTZKW 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 18
读取速度，GB/s

16.1 19.9
写入速度，GB/s

10.1 15.3
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2764 3421

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HYMP112S64CP6-S6 1GB

Corsair CMD64GX4M8A2400C14 8GB

Corsair CMD64GX4M8A2400C14 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Corsair CMR128GX4M8Z2933C16 16GB

Corsair CMR128GX4M8Z2933C16 16GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Crucial Technology CT16G4SFD824A.C16FBR 16GB

Crucial Technology CT16G4SFD824A.C16FBR 16GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Corsair CMT16GX4M2C3466C16 8GB

Corsair CMT16GX4M2C3466C16 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

G Skill Intl F4-4000C18-8GTZRB 8GB

G Skill Intl F4-4000C18-8GTZRB 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Crucial Technology CT8G4DFD824A.M16FE 8GB

Crucial Technology CT8G4DFD824A.M16FE 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

G Skill Intl F4-3000C16-8GVRB 8GB

G Skill Intl F4-3000C16-8GVRB 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Corsair CM4X16GE2666C16K8 16GB

Corsair CM4X16GE2666C16K8 16GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Crucial Technology CT16G4SFS832A.C8FE 16GB

Crucial Technology CT16G4SFS832A.C8FE 16GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

SK Hynix HMAA2GU6CJR8N-XN 16GB

SK Hynix HMAA2GU6CJR8N-XN 16GB

Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

Essencore Limited KD48GS88C-32N2200 8GB

Essencore Limited KD48GS88C-32N2200 8GB

Crucial Technology CT2K102464BD160B 8GB

Crucial Technology CT2K102464BD160B 8GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G