Samsung 1600 CL10 Series 8GB vs Mushkin MRA4S293MMMF32G 32GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Mushkin MRA4S293MMMF32G 32GB

Mushkin MRA4S293MMMF32G 32GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 32

左右 22% 更低的延时
更快的读取速度，GB/s

16.1 15.7

测试中的平均数值

Mushkin MRA4S293MMMF32G 32GB

需要考虑的原因
Mushkin MRA4S293MMMF32G 32GB

报告一个错误

更快的写入速度，GB/s

14.9 10.1

测试中的平均数值
更高的内存带宽，mbps

23400 12800

左右 1.83 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Mushkin MRA4S293MMMF32G 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 32
读取速度，GB/s

16.1 15.7
写入速度，GB/s

10.1 14.9
内存带宽，mbps

12800 23400

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

9-9-9-24 / 1600 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

2764 3368

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Avant Technology J644GU44J2320NQ 32GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Kingston 9905403-038.A00LF 4GB

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Kingston 9905403-038.A00LF 4GB

Kingston ACR32D4U2S8HD-8X 8GB

Kingston ACR32D4U2S8HD-8X 8GB