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Samsung 1600 CL10 Series 8GB
Transcend Information TS2GSH64V4B 16GB

Samsung 1600 CL10 Series 8GB vs Transcend Information TS2GSH64V4B 16GB

总分
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分
star star star star star
Transcend Information TS2GSH64V4B 16GB

Transcend Information TS2GSH64V4B 16GB

差异 规格 评论

差异

Samsung 1600 CL10 Series 8GB 需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.1 left arrow 15.3
    测试中的平均数值
Transcend Information TS2GSH64V4B 16GB 需要考虑的原因
Transcend Information TS2GSH64V4B 16GB
报告一个错误
  • 更快的写入速度，GB/s
    11.4 left arrow 10.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Transcend Information TS2GSH64V4B 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 25
  • 读取速度，GB/s
    16.1 left arrow 15.3
  • 写入速度，GB/s
    10.1 left arrow 11.4
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2764 left arrow 2681

Samsung 1600 CL10 Series 8GB RAM的比较

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

Transcend Information TS2GSH64V4B 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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Samsung 1600 CL10 Series 8GB
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Transcend Information TS2GSH64V4B 16GB
Transcend Information TS2GSH64V4B 16GB
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内存RAM
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Transcend Information TS2GSH64V4B 16GB
Transcend Information TS2GSH64V4B 16GB
内存RAM
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内存RAM
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SK Hynix HYMP112U64CP8-S6 1GB
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Micron Technology 9ASF1G72AZ-2G3B1 8GB
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