Samsung DDR3 8GB 1600MHz 8GB vs Corsair CMWX8GD3000C15W4 8GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Corsair CMWX8GD3000C15W4 8GB

Corsair CMWX8GD3000C15W4 8GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

更快的读取速度，GB/s

14.9 14.2

测试中的平均数值

Corsair CMWX8GD3000C15W4 8GB

需要考虑的原因
Corsair CMWX8GD3000C15W4 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 43

左右 -34% 更低的延时
更快的写入速度，GB/s

11.0 9.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Corsair CMWX8GD3000C15W4 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 32
读取速度，GB/s

14.9 14.2
写入速度，GB/s

9.6 11.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2506 2933

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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最新比较

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Corsair CMW16GX4M2D3600C16 8GB

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Corsair CMW16GX4M2D3600C18 8GB

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Corsair CML8GX3M2A1866C9 4GB

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Samsung T471A1K43CB1-CRC 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

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G Skill Intl F4-3600C18-8GTRS 8GB

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Ramaxel Technology RMT3020EC58E9F1333 4GB

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Crucial Technology BLS8G4D26BFSCK.8FD 8GB

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AMD AE34G1601U1 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Corsair CMW16GX4M2A2666C16 8GB

Corsair CMW16GX4M2A2666C16 8GB

Elpida EBJ40UG8EFU0-GN-F 4GB

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Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

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Corsair CMD16GX3M2A1600C7 8GB

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Patriot Memory (PDP Systems) PSD416G21332 16GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

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Chun Well Technology Holding Limited CL19-20-20 D4-3600

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Micron Technology 4ATF51264HZ-2G3E1 4GB

Micron Technology 4ATF51264HZ-2G3E1 4GB