Samsung DDR3 8GB 1600MHz 8GB vs Gloway International Co. Ltd. TYP4U3200E16082C 8GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

需要考虑的原因
Gloway International Co. Ltd. TYP4U3200E16082C 8GB

报告一个错误

低于PassMark测试中的延时，ns

39 43

左右 -10% 更低的延时
更快的读取速度，GB/s

17.5 14.9

测试中的平均数值
更快的写入速度，GB/s

10.6 9.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Gloway International Co. Ltd. TYP4U3200E16082C 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 39
读取速度，GB/s

14.9 17.5
写入速度，GB/s

9.6 10.6
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2506 2600

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3600C16-8GTRS 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

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Golden Empire CL16-18-18 D4-3000 16GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Apacer Technology 78.B1GET.AU00C 4GB

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G Skill Intl F4-3000C16-16GTZN 16GB

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Kingston KP4T2F-PSB 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Kingston KHX3200C16D4/8GX 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Kingston KDK8NX-MIE 16GB

Kingston KDK8NX-MIE 16GB

Kingston KHX2400C11D3/4GX 4GB

Kingston KHX2400C11D3/4GX 4GB

Kingston 9905624-018.A00G 8GB

Kingston 9905624-018.A00G 8GB

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V-GEN D4S8GL32A8TS 8GB