Samsung M3 78T2863EHS-CF7 1GB vs Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 14.5

测试中的平均数值
更快的写入速度，GB/s

2,123.3 13.0

测试中的平均数值

Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

需要考虑的原因
Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 59

左右 -136% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Gold Key Technology Co Ltd NMUD416F82-3200D 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 25
读取速度，GB/s

4,833.8 14.5
写入速度，GB/s

2,123.3 13.0
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

731 3377

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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最新比较

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Corsair CM2X1024-6400C4 1GB

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Crucial Technology CT32G4SFD832A.C16FE 32GB

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Corsair CMSX8GX4M2A2666C18 4GB

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G Skill Intl F4-2800C16-4GRR 4GB

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Kingston KHX2400C11D3/4GX 4GB

Kingston KHX2400C11D3/4GX 4GB

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Kingston 99U5469-045.A00LF 4GB

Kingston 9965662-013.A01G 16GB

Kingston 9965662-013.A01G 16GB

Samsung M391B5273CH0-CH9 4GB

Samsung M391B5273CH0-CH9 4GB

Crucial Technology CT8G4SFRA32A.M4FE 8GB

Crucial Technology CT8G4SFRA32A.M4FE 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

G Skill Intl F4-3600C14-8GTZRA 8GB

G Skill Intl F4-3600C14-8GTZRA 8GB

Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

Corsair CMT64GX4M4C3200C16 16GB

Corsair CMT64GX4M4C3200C16 16GB