Samsung M3 78T2863QZS-CF7 1GB vs Maxsun MSD48G30Q3 8GB

总分

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分

Maxsun MSD48G30Q3 8GB

Maxsun MSD48G30Q3 8GB

差异规格评论

差异

Samsung M3 78T2863QZS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 15.5

测试中的平均数值

Maxsun MSD48G30Q3 8GB

需要考虑的原因
Maxsun MSD48G30Q3 8GB

报告一个错误

低于PassMark测试中的延时，ns

68 69

左右 -1% 更低的延时
更快的写入速度，GB/s

8.1 1,857.7

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863QZS-CF7 1GB

Maxsun MSD48G30Q3 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 68
读取速度，GB/s

4,217.2 15.5
写入速度，GB/s

1,857.7 8.1
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

668 1925

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMD32GX4M4C3200C16 8GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

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G Skill Intl F3-1333C9-4GIS 4GB

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Corsair CMK32GX4M2K3600C16 16GB

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Ramaxel Technology RMSA3320MJ78HAF-3200 8GB

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Samsung DDR3 8GB 1600MHz 8GB

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AMD R748G2400U2S 8GB

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Crucial Technology CT25664AA800.M16FM 2GB

Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB

Chun Well Technology Holding Limited CL22-22-22 D4-3200

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Gold Key Technology Co Ltd GKE160SO102408-3200 16GB

Gold Key Technology Co Ltd GKE160SO102408-3200 16GB

Kingston 99U5471-056.A00LF 8GB

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G Skill Intl F4-3200C15-8GTZ 8GB

G Skill Intl F4-3200C15-8GTZ 8GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Samsung M378A1K43BB1-CPB 8GB

Samsung M378A1K43BB1-CPB 8GB