Samsung M3 78T2863QZS-CF7 1GB vs Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB

总分

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分

Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB

Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB

差异规格评论

差异

Samsung M3 78T2863QZS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 19.4

测试中的平均数值

Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB

需要考虑的原因
Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 69

左右 -263% 更低的延时
更快的写入速度，GB/s

14.5 1,857.7

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863QZS-CF7 1GB

Wilk Elektronik S.A. GX2426D464S/8GSBS2 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 19
读取速度，GB/s

4,217.2 19.4
写入速度，GB/s

1,857.7 14.5
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 15
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

668 3290

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3200C16-8GVK 8GB

G Skill Intl F4-3200C16-8GVK 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Micron Technology 72ASS8G72LZ-2G3B2 64GB

Micron Technology 72ASS8G72LZ-2G3B2 64GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Kingston 9965640-015.A00G 32GB

Kingston 9965640-015.A00G 32GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

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Kingston 9905701-141.A00G 16GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

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Kingston KHX2666C15D4/4G 4GB